JPS6152992B2 - - Google Patents

Info

Publication number
JPS6152992B2
JPS6152992B2 JP56042867A JP4286781A JPS6152992B2 JP S6152992 B2 JPS6152992 B2 JP S6152992B2 JP 56042867 A JP56042867 A JP 56042867A JP 4286781 A JP4286781 A JP 4286781A JP S6152992 B2 JPS6152992 B2 JP S6152992B2
Authority
JP
Japan
Prior art keywords
transparent conductive
layer
conductive film
type
tin oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56042867A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57157578A (en
Inventor
Yoshihiro Hamakawa
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56042867A priority Critical patent/JPS57157578A/ja
Publication of JPS57157578A publication Critical patent/JPS57157578A/ja
Publication of JPS6152992B2 publication Critical patent/JPS6152992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP56042867A 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element Granted JPS57157578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042867A JPS57157578A (en) 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042867A JPS57157578A (en) 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element

Publications (2)

Publication Number Publication Date
JPS57157578A JPS57157578A (en) 1982-09-29
JPS6152992B2 true JPS6152992B2 (en]) 1986-11-15

Family

ID=12647979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042867A Granted JPS57157578A (en) 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element

Country Status (1)

Country Link
JP (1) JPS57157578A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020261746A1 (ja) * 2019-06-25 2020-12-30 パナソニックＩｐマネジメント株式会社 固体撮像装置およびカメラ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107252A (ja) * 1982-12-10 1984-06-21 Matsushita Electric Ind Co Ltd ガス検知素子
JPS58151072A (ja) * 1983-02-08 1983-09-08 Konishiroku Photo Ind Co Ltd 光電変換素子及びその製造方法
JPS59161881A (ja) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS6068663A (ja) * 1983-09-26 1985-04-19 Komatsu Denshi Kinzoku Kk アモルフアスシリコン太陽電池

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596685A (en) * 1979-01-18 1980-07-23 Sanyo Electric Co Ltd Hetero junction photodiode
JPS5846074B2 (ja) * 1979-03-12 1983-10-14 三洋電機株式会社 光起電力装置の製造方法
US4217148A (en) * 1979-06-18 1980-08-12 Rca Corporation Compensated amorphous silicon solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020261746A1 (ja) * 2019-06-25 2020-12-30 パナソニックＩｐマネジメント株式会社 固体撮像装置およびカメラ

Also Published As

Publication number Publication date
JPS57157578A (en) 1982-09-29

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